Reduction of EMI susceptibility in CMOS bandgap reference circuits

摘要

This paper presents a successful approach to increase the electromagnetic interference (EMI) immunity of CMOS bandgap reference circuits. Layout techniques along with some changes in the reference schematics lead to a robust electromagnetic immunity, preserving good overall performances. Measurement results confirm the low susceptibility of the proposed circuits. They exhibit only a few millivolts shift, for interfering signals of 1 Vpp in the frequency range of 1 MHz to 4 GHz, compared to the classical topologies that may reach more than 1 V. The circuits were fabricated in a 0.8-ttm standard CMOS technology.